Formation of misfit dislocations with in-plane Burgers vectors in boron diffused (111) silicon
Author:
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Mechanical properties of thin films
2. Defects associated with the accommodation of misfit between crystals
3. Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metals
4. Study of heteroepitaxial interfaces by atomic resolution electron microscopy
5. An analysis of the residual strains in epitaxial tin films
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures;Materials Science and Engineering: A;1997-08
2. Dislocations induced by boron diffusion in silicon: A transmission electron microscopy study;Philosophical Magazine A;1997-01
3. Distribution of Residual Stresses in Boron Doped p+ Silicon Films;Journal of The Electrochemical Society;1996-10-01
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