Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures-Reference-Cited by-同舟云学术

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Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures

Published:1997-08 Issue:1-2 Volume:233 Page:126-138
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Ernst F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Lattice Parameter and Density in Germanium-Silicon Alloys1

2. Misfit dislocations in lattice-mismatched epitaxial films

3. Microscopy of Semiconducting Materials;Lyutovich,1997

4. Liquid phase epitaxy of GeSi on {111} Si substrates: lattice defect structure and electronic properties

5. Lattice mismatch accommodation atGeSi/{111}Si interfaces grown by liquid phase epitaxy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn solution;Thin Solid Films;2020-06

2. A multiscale study of misfit dislocations in PbTe/PbSe(001) heteroepitaxy;Journal of Materials Research;2019-04-29

3. X-ray diffraction from hexagonal dislocation networks;Philosophical Magazine;2014-09-09

4. Analysis of the dislocation structure at the Ge/Si(111) heterointerface;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2014-07

5. Interface engineering for improved growth of GaSb on Si(111);Journal of Crystal Growth;2011-05

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