Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. InAs self-assembled quantum-dot lasers grown on (100) InP
2. Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1−xAlxAs/InP
3. Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers
4. Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
5. Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
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1. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography;Materials;2021-01-14
2. Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters;Physical Review Applied;2020-12-17
3. Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures;Chinese Physics Letters;2011-02
4. Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots;Solid State Communications;2009-06
5. Spectroscopy of shallow InAs/InP quantum wire nanostructures;Nanotechnology;2009-01-15
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