Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures-Reference-Cited by-同舟云学术

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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures

Published:2011-02 Issue:2 Volume:28 Page:027801
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Yang Xin-Rong,Xu Bo,Wang Hai-Fei,Zhao Guo-Qing,Shi Shu-Hui,Shen Xiao-Zhi,Li Jun-Feng,Wang Zhan-Guo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/28/2/027801/pdf

Reference21 articles.

1. Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing

2. InP based lasers and optical amplifiers with wire-/dot-like active regions

3. Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates

4. Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001)

5. Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic Excitation Energy Transfer Between Quasi-Zero-Dimensional Systems;e-Journal of Surface Science and Nanotechnology;2014

2. Plasmons in a free-standing nanorod with a two-dimensional parabolic quantum well caused by surface states;Chinese Physics B;2012-05

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