Structural investigation of InSe layered semiconductors-Reference-Cited by-同舟云学术

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Structural investigation of InSe layered semiconductors

Published:2020-05 Issue: Volume:311 Page:113855
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Grimaldi I.,Gerace T.,Pipita M.M.,Perrotta I.D.,Ciuchi F.,Berger H.,Papagno M.,Castriota M.,Pacilé D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference36 articles.

1. Van der Waals heterostructures

2. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

3. 2D materials and van der Waals heterostructures

4. Van der Waals stacked 2D layered materials for optoelectronics

5. Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on room-temperature persistent photoconductivity in γ-InSe layered semiconductor;Solid State Communications;2024-12

2. Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers;Advanced Materials;2024-09-14

3. Single crystalline Holmium doped InSe for optical limiting operation in Near-IR region;Physica Scripta;2024-08-13

4. Optical Study on Temperature-Dependent Absorption Edge of γ-InSe-Layered Semiconductor;Applied Sciences;2024-07-31

5. Growth of vertical type InSe/TMDs heterostructures for efficient charge transfer and nonlinear optical performance;Applied Surface Science;2024-05

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