An ab initio analysis of electronic states associated with a silicon vacancy in cubic symmetry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon
2. Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements
3. Observation of Vacancy in High Purity Silicon Crystal Using Low-Temperature Ultrasonic Measurements
4. Vacancies in defect-free zone of point-defect-controlled CZ silicon observed by low-temperature ultrasonic measurements
5. Observation of vacancy in crystalline silicon using low-temperature ultrasonic measurements
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1. Theory of Photon-Assisted Magnetoacoustic Resonance as a New Probe of Quadrupole Dynamics;Journal of the Physical Society of Japan;2020-02-15
2. Surface acoustic wave diagnosis of vacancy orbital with electric quadrupoles in silicon;Journal of Physics: Conference Series;2015-03-18
3. Relativistic tight-binding approximation method for materials immersed in a uniform magnetic field: Application to crystalline silicon;Physical Review B;2015-02-23
4. Elastic Softening of Surface Acoustic Wave Caused by Vacancy Orbital in Silicon Wafer;Journal of the Physical Society of Japan;2014-03-15
5. Strong Quadrupole-Strain Interaction of Vacancy Orbital in Boron-Doped Czochralski Silicon;Journal of the Physical Society of Japan;2013-12-15
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