Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
2. Room-temperature transistor based on a single carbon nanotube
3. Crossed Nanotube Junctions
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5. Atomic structure and electronic properties of single-walled carbon nanotubes
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3. P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al2O3 gate layers;Solid State Sciences;2010-05
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