Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions-Reference-Cited by-同舟云学术

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Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

Published:2010-02-23 Issue:4 Volume:25 Page:045010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Koo Jamin,Lee Myeongwon,Kang Jeongmin,Yoon Changjoon,Kim Kwangeun,Jeon Youngin,Kim Sangsig

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. High Performance Silicon Nanowire Field Effect Transistors

2. High-performance thin-film transistors using semiconductor nanowires and nanoribbons

3. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3gate oxides

4. Logic Gates and Computation from Assembled Nanowire Building Blocks

5. Ge/Si nanowire heterostructures as high-performance field-effect transistors

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1. Electrical and Optical Characteristics of Heterojunction Devices Composed of Silicon Nanowires and Mercury Selenide Nanoparticle Films on Flexible Plastics;Journal of Nanoscience and Nanotechnology;2013-09-01

2. Photoluminescence Studies of ZnO Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy;Journal of Nanoscience and Nanotechnology;2013-05-01

3. Hydrothermal Growth and Characterization of ZnO Nanostructures on R-plane Sapphire Substrates;Korean Journal of Metals and Materials;2012-08-05

4. Transport properties of Sb-doped Si nanowires;Journal of Crystal Growth;2012-08

5. Fabrication and photoluminescence studies of porous ZnO nanorods;Journal of the Korean Physical Society;2012-07

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