Interband optical transitions of an InAs/InGaAs dots-in-a-well structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference26 articles.
1. High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm
2. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
3. Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
4. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
5. GaAs-based long-wavelength lasers
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1. Piezoelectric field effect on the optical properties of In0.21Ga0.79As/GaAs (113) MQW;Optical Materials;2016-08
2. Bound to continuum intersubband transition optical properties in the strain reducing layer-assisted InAs quantum dot structure;Physica E: Low-dimensional Systems and Nanostructures;2016-01
3. Electric field induced optical absorption and refractive index changes in a diluted magnetic quantum well;Physica E: Low-dimensional Systems and Nanostructures;2013-01
4. Energy Band and Absorption Coefficient of Quantum Dots in a Well Structure;Acta Physica Polonica A;2012-07
5. Linear and Nonlinear Optical Properties of Spherical Quantum Dots: Effects of Hydrogenic Impurity and Conduction Band Non-Parabolicity;Communications in Theoretical Physics;2012-03
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