Bound to continuum intersubband transition optical properties in the strain reducing layer-assisted InAs quantum dot structure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference36 articles.
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5. Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector;Shenoi;J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct.,2008
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of intersubband transitions in truncated pyramid-shaped InAs/GaAs quantum dots coupled to wetting layer: Strain and size matter;Superlattices and Microstructures;2018-10
2. Electron Raman Scattering and Raman Gain in Pyramidal Semiconductor Quantum Dots;Journal of Nanoscience and Nanotechnology;2017-02-01
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