C–V studies on metal–ferroelectric bismuth vanadate (Bi2VO5.5)–semiconductor structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Ferroelectric Memories
2. Ferroelectric switching of a field‐effect transistor with a lithium niobate gate insulator
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4. Evidence for ferroelectric border traps near the SrBi2Ta2O9/Si interface through capacitance–voltage measurement
5. Electrical properties of Bi3.25La0.75Ti3O12 thin films on Si for a metal–ferroelectric–insulator–semiconductor structure
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1. Planetary ball milling induced piezocatalysis for dye degradation using Bi2VO5.5;International Journal of Applied Ceramic Technology;2024-02-27
2. Ball-milling synthesized Bi2VO5.5 for piezo-photocatalytic assessment;Scientific Reports;2023-05-20
3. Piezo-photocatalytic activity of Bi2VO5.5 for methylene blue dye degradation;Journal of Materials Research and Technology;2022-11
4. Characterization of Au/PbTi0.5Fe0.5O3/Si structure for possible multiferroic based non-volatile memory applications;Journal of Applied Physics;2017-03-21
5. Observation of temperature effect on electrical properties of novel Au/Bi0.7Dy0.3FeO3/ZnO/p-Si thin film MIS capacitor for MEMS applications;Microelectronic Engineering;2017-01
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