A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition-Reference-Cited by-同舟云学术

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A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Published:2004-08 Issue:7 Volume:131 Page:479-484
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Lal K.,Ghosh P.,Biswas D.,Meikap A.K.,Chattopadhyay S.K.,Chatterjee S.K.,Ghosh M.,Baba K.,Hatada R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference49 articles.

1. Handbook of Refractory Carbides and Nitrides Properties, Characteristics, Processing and Applications;Pierson,1996

2. Transition Metal Carbides and Nitrides;Thod,1971

3. Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric

4. AES and factor analysis study of the interaction of oxygen with tantalum and tantalum nitride thin films

5. Low‐temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiation

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2. Transport properties of polycrystalline TaN_x thin films prepared by DC reactive magnetron sputtering method;PROG SUPERCOND CRYOG;2021

3. Impact of silica-substrate chemistry on tantalum nitride thin films deposited by atomic layer deposition: Microstructure, chemistry and electrical behaviors;Thin Solid Films;2019-01

4. Granular-composite-like electrical transport properties of polycrystalline cubic TaN x thin films prepared by rf sputtering method;Solid State Communications;2018-09

5. Size-dependent electrical transport properties in Co nanocluster-assembled granular films;Scientific Reports;2017-09-15

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