AES and factor analysis study of the interaction of oxygen with tantalum and tantalum nitride thin films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference7 articles.
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1. Electrochemical investigation of the roles of oxyanions in chemical–mechanical planarization of tantalum and tantalum nitride;Journal of Applied Electrochemistry;2011-02-27
2. Chemical Mechanical Planarization of TaN Wafers Using Oxalic and Tartaric Acid Based Slurries;Electrochemical and Solid-State Letters;2010
3. Resonant photoemission study of the electronic structure of3 keVnitrogen-implanted tantalum;Physical Review B;2005-01-07
4. Influence of a 5 Å Tantalum Nitride Interface Layer on Dielectric Properties of Zirconium-Doped Tantalum Oxide High-k Films;Journal of The Electrochemical Society;2005
5. Optical properties of tantalum nitride films fabricated using reactive unbalanced magnetron sputtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-09
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