Leakage currents through In/MgO/n-type Si/In structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Interfacial structure and electrical properties of ultrathin HfO2dielectric films on Si substrates by surface sol–gel method
2. Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
3. Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy
4. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy
5. Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO∕p-Si
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1. Resistive switching characteristics of devices having a trilayer CuAlO x structure in the dark and under visible light illumination;Journal of Materials Science: Materials in Electronics;2017-06-09
2. RETRACTED: Current conduction mechanisms through Au/SnO/n-type Si/In devices;Thin Solid Films;2016-07
3. Photoluminescent, morphological and electrical properties of ZrO2 and ZrO2:polyvinyl alcohol composite thin films;Journal of Non-Crystalline Solids;2015-10
4. Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon;Chemistry of Materials;2014-01-13
5. Sol-Gel Derived Nano-Magnesium Oxide: Influence of Drying Temperature to the Dielectric Layer Properties;IOP Conference Series: Materials Science and Engineering;2013-06-06
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