Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon-Reference-Cited by-同舟云学术

Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon

Published:2014-01-13 Issue:2 Volume:26 Page:1243-1249
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Bilousov O. V.¹,Carvajal J. J.¹,Vilalta-Clemente A.²,Ruterana P.²,Díaz F.¹,Aguiló M.¹,O’Dwyer C.³⁴

Affiliation:

1. Física i Cristallografia de Materials i Nanomaterials (FiCMA-FiCNA) and EMaS, Universitat Rovira i Virgili (URV), Marcellí Domingo s/n, E-43007 Tarragona, Spain

2. CIMAP, UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France

3. Department of Chemistry, University College Cork, Cork, Ireland

4. Micro & Nanoelectronics Centre, Tyndall National Institute, Lee Maltings, Cork, Ireland

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm4037023

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