The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
2. Evolution of the magnetic anisotropy with carrier density in hydrogenatedGa1−xMnxAs
3. Ferromagnetic resonance inGa1−xMnxAs:Effects of magnetic anisotropy
4. Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1−xMnxAs films
5. Temperature dependence of magnetization in GaMnAs film with critical strain
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1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers;Semiconductors;2021-02
2. RETRACTED: Magneto transport measurements to unravel the epitaxial strain control of magnetic anisotropy in Ga1−xMnxAs/InGaAs layers;Journal of Magnetism and Magnetic Materials;2018-04
3. Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance;Scientific Reports;2018-02-02
4. Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics;Nanostructure Science and Technology;2018
5. Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor;Current Applied Physics;2014-12
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