Temperature dependence of magnetization in GaMnAs film with critical strain
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. Effect of magnetic anisotropy on the transverse planar Hall resistance ofGa1−xMnxAsfilms grown on vicinalGaAssubstrates
2. Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films
3. Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices
4. Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
5. Stable Multidomain Structures Formed in the Process of Magnetization Reversal in GaMnAs Ferromagnetic Semiconductor Thin Films
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film;Solid State Communications;2016-10
2. Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film;Journal of Crystal Growth;2013-09
3. Quantitative investigation of magnetic domains with in-plane and out-of-plane easy axes in GaMnAs films by Hall effect;Journal of Applied Physics;2013-05-07
4. Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100)GaAs thin films;Applied Physics Letters;2010-03-08
5. Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect;Solid State Communications;2010-01
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