Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films-Reference-Cited by-同舟云学术

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Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films

Published:2001-12 Issue: Volume:308-310 Page:374-377
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Losurdo M.,Cerqueira M.F.,Stepikhova M.V.,Alves E.,Giangregorio M.M.,Pinto P.,Ferreira J.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering

2. Applications of spectroscopic ellipsometry to microelectronics

3. Spectroscopic ellipsometry data analysis: measured versus calculated quantities

4. Anatomy of μc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ellipsometry of Semiconductor Nanocrystals;Ellipsometry at the Nanoscale;2013

2. Erbium in silicon;Semiconductor Science and Technology;2005-11-09

3. The visible and near IR photoluminescent response of nc-Si:Er thin films produced by rf sputtering;Nanotechnology;2004-04-17

4. Quantum confinement in rare-earth doped semiconductor systems;Current Opinion in Solid State and Materials Science;2003-04

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