Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies-Reference-Cited by-同舟云学术

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Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies

Published:2001-01 Issue: Volume:302-303 Page:180-187
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Murin L.I,Markevich V.P,Suezawa M,Lindström J.L,Kleverman M,Hallberg T

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Effect of Heat Treatment upon the Electrical Properties of Silicon Crystals

2. Diffusivity of oxygen in silicon at the donor formation temperature

3. Enhanced thermal donor formation in silicon exposed to a hydrogen plasma

4. Semiconductor Silicon;Newman,1990

5. Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperatures below 500 °C

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1. Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon;Solar RRL;2021-09-17

2. Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies;Journal of Applied Physics;2013-02-21

3. Vibrational Absorption of O and N Interstitial Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27

4. The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?;Applied Physics Letters;2011-05-02

5. Local vibrational modes of the oxygen trimer in Si;physica status solidi (c);2011-01-13

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