Ta-doped modified Gd2O3 film for a novel high k gate dielectric-Reference-Cited by-同舟云学术

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Ta-doped modified Gd2O3 film for a novel high k gate dielectric

Published:2019-10 Issue:10 Volume:35 Page:2305-2311
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Li Shuan,Wu Yanqing,Li Guoling,Yu Hongen,Fu Kai,Wu Yong,Zheng Jie,Tian Wenhuai,Li Xingguo

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Beijing Municipal Commission of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Polymers and Plastics,Mechanical Engineering,Mechanics of Materials,Ceramics and Composites

Reference50 articles.

1. High-κ Dielectric Materials for Microelectronics

2. High-K materials and metal gates for CMOS applications

3. High-k/Ge MOSFETs for future nanoelectronics

4. 5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties

5. Nanostructured Photodetectors: From Ultraviolet to Terahertz

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3. Study on annealing effect of Ti-doped Gd₂O₃ films for high k dielectrics;Journal of Physics: Conference Series;2024-02-01

4. Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric;Materials Chemistry and Physics;2022-12

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