Study on annealing effect of Ti-doped Gd2O3 films for high k dielectrics

Author:

Li Shuan,Wu Daogao,Wang Shuang,Yang Hongbo,Li Xingguo

Abstract

Abstract Rare earth oxides and nitrogen oxides have drawn more and more focus as candidates for next-generation gate dielectrics in MOSFET. In this study, a Gd2O3 film doped with 3% Ti was fabricated through co-sputtering gadolinium and titanium targets in a diluted oxygen atmosphere. A systematic study was carried out to examine the annealing influence on the microstructure, surface roughness, band gap, and electrical properties of this film. Compared with as-deposited film, the annealed sample displays a smaller surface roughness (Ra=0.45 nm) and more excellent electrical performance. In terms of band gap analysis, as the annealing temperature rises from 400 to 700°C, the band gap has fallen from 4.70 eV to 4.63 eV, indicating a smaller value compared to the as-deposited sample (4.73 eV). As a result, the 600°C-annealed thin film shows the most outstanding performance with the largest k value of 23.9. Further, 600°C-annealed and as-deposited films were selected for impedance spectrum analysis and examination of the equivalent circuit. This work can offer a new insight to design novel rare earth oxides with high k dielectric and select the corresponding annealing process.

Publisher

IOP Publishing

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3