Author:
Brożek Tomasz,Chan Y.David,Viswanathan Chand R
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. A survey of damage effects in plasma etching;Fonash;Solid State Technol.,1994
2. Shin, H., King, C.-C. and Hu, C., Thin oxide damage by plasma etching and ashing processes In Proc. IEEE. Int. Rel. Phys. Symp., 1992, p. 37
3. Thin oxide charging current during plasma etching of aluminum;Shin;IEEE Electron Dev. Lett.,1991
4. Modeling of oxide breakdown from gate charging during resist ashing;Fang;IEEE Trans. Electron Dev.,1994
5. Noguchi, K. and Okumura, K., The effect of plasma-induced oxide and interface degradation on hot carrier reliability. In Proc. IEEE Int. Rel. Phys. Symp., 1994, p. 232
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