Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics-Reference-Cited by-同舟云学术

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Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics

Published:2001-08 Issue:8 Volume:45 Page:1299-1307
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Brozek Tomasz,Huber John,Walls James

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Plasma-charging damage: a physical model;Cheung;J Appl Phys,1994

2. Brozek T, Dao T. Effect of device type and plasma process on the oxide thickness dependence of plasma-induced charging damage. Proc Third Int Symp PPID. 1998:46–9

3. Alavi M, Jacobs S, Ahmed S, Chern C-H, McGregor P. Effect of MOS device scaling on process induced gate charging. Proc Second Int Symp PPID. 1997:7–10

4. Evaluation of plasma damage using fully processed metal-oxide–semiconductor transistors;Li;J Vac Sci Technol (B),1996

5. Using SEMATECH electrical test structures in assessing plasma induced damage in poly etching;Chan;Jpn J Appl Phys,1994

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of plasma induced damage on PMOSFETs Tin/HF silicate stack;2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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