The prospect of process-induced charging damage in future thin gate oxides-Reference-Cited by-同舟云学术

The prospect of process-induced charging damage in future thin gate oxides

Published:1999-05 Issue:5 Volume:39 Page:567-577
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Park Donggun,Hu Chenming

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference49 articles.

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2. Taur Y, Nowak EJ. CMOS devices below 0.1 μm: how high will performance go? International electron device meeting technical digest. 1997, p. 215

3. Hu C, Park D, King Y. Thin gate oxides promise high reliability. Semiconductor International 1998;215

4. Wadanabe T, Yoshida Y. Dielectric breakdown of gate insulator due to reactive ion etching. Solid State Technology 1984;263

5. The effect of charge build up on gate oxide breakdown during dry etching;Tsunokuni,1987

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