Author:
Goguenheim D,Bravaix A,Moragues J.M,Lambert P,Boivin P
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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1. Radiation Damage in Silicon MOS Devices;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
2. OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY;International Journal of High Speed Electronics and Systems;2001-09
3. Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides;Journal of Non-Crystalline Solids;2001-02