Specific resistivity of a metal-n GaAs OHMIC contact with an intermediate N+ layer-Reference-Cited by-同舟云学术

Specific resistivity of a metal-n GaAs OHMIC contact with an intermediate N+ layer

Published:1985-01 Issue:5 Volume:25 Page:837-840
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Gupta R.P.,Khokle W.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Reliability and Degradation: Semiconductor Devices and Circuits;Morgan,1981

2. Ohmic contacts to III–V compound semiconductors: a review of fabrication techniques;Piotrowska;Solid-St. Electron.,1983

3. Ohmic contacts to GaAs;Braslau;Thin Solid Films,1983

4. Alloyed ohmic contacts to GaAs;Braslau;J. Vac. Sci. Technol.,1981

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature annealed ohmic contacts to Si-doped GaAs and contact formation mechanisms;Materials Chemistry and Physics;2009-02

2. Very low resistance non-alloyed and in situ ohmic contacts to n-GaAs using delta -doped surface layers;Semiconductor Science and Technology;1993-10-01

3. Influence of doping density and deposition technology on ohmic contacts to n-type gallium arsenide;Semiconductor Science and Technology;1991-04-01

4. A non‐alloyed ohmic contact formation onn‐type GaAs;Journal of Applied Physics;1990-03-15

5. Picosecond GaAs X- and gamma-ray photodetectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1989-11