The effect of transition region on the direct tunneling current and Fowler–Nordheim tunneling current oscillations in ultrathin MOS structures-Reference-Cited by-同舟云学术

The effect of transition region on the direct tunneling current and Fowler–Nordheim tunneling current oscillations in ultrathin MOS structures

Published:2002-02 Issue:2 Volume:42 Page:175-181
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Mao Lingfeng,Zhang Heqiu,Tan Changhua,Xu Mingzhen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Oscillations in MOS tunneling;Lewicki;J Appl Phys,1975

2. Resonance effects observed at the onset of Fowler–Nordheim tunneling in thin MOS structure;Petersson;Solid State Electron,1975

3. Behavior of the Si/SiO2 interface observed by Fowler–Nordheim tunneling;Maserjian;J Appl Phys,1982

4. On the SiOx transition layer in abrupt Si–SiO2 chemical interface in MOS structures;Sune;Surf Sci,1989

5. On the SiO2 transition layer in abrupt Si–SiO2 chemical interface in MOS structures;Sune;Phys Status Surf Sci,1989

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