Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor;Transactions on Electrical and Electronic Materials;2013-02-25
2. Characteristic and Fluctuation of Multi-fin FinFETs;Lecture Notes in Nanoscale Science and Technology;2013
3. Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors;Semiconductor Science and Technology;2009-10-27
4. Design optimization of a current mirror amplifier integrated circuit using a computational statistics technique;Mathematics and Computers in Simulation;2008-12
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