Shape effect on electromigration in VLSI interconnects-Reference-Cited by-同舟云学术

Shape effect on electromigration in VLSI interconnects

Published:1997-07 Issue:7 Volume:37 Page:1073-1078
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Gonzalez J.L.,Rubio A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Future CMOS scaling and reliability;Hu,1993

2. Reliability modelling for electromigration failure;Lloyd;Quality and Reliab. Engng Int.,1994

3. Width dependence of electromigration life in AI-Cu, AI-Cu-Si, and Ag conductors;Scoggan,1975

4. Effect of metal line geometry on electromigration lifetime in Al-Cu submicron interconnects;Kwok,1988

5. Mass transport of aluminium by momentum exchange with conduction electrons;Black,1967

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