Alleviating Through-Silicon-Via Electromigration for 3-D Integrated Circuits Taking Advantage of Self-Healing Effect-Reference-Cited by-同舟云学术

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Alleviating Through-Silicon-Via Electromigration for 3-D Integrated Circuits Taking Advantage of Self-Healing Effect

Published:2016-11 Issue:11 Volume:24 Page:3310-3322
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Cheng Yuanqing^ORCID,Todri-Sanial Aida^ORCID,Yang Jianlei,Zhao Weisheng

Funder

Beijing Natural Science Foundation

Beijing Municipal of Science and Technology

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/92/7605567/07457317.pdf?arnumber=7457317

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Built-in Self-prevention (BISP) for runtime ageing effects of TSVs in 3D ICs;Integration;2024-01

2. Electromigration in three-dimensional integrated circuits;Applied Physics Reviews;2023-05-16

3. TSV Built-In Self-Repair Architecture for Improving the Yield and Reliability of HBM;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-04

4. TRUST: Through-Silicon Via Repair Using Switch Matrix Topology;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2022

5. Machine learning based effective linear regression model for TSV layer assignment in 3DIC;Microprocessors and Microsystems;2021-06

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