MBE growth and device applications of lattice-matched and strained heterostructures on (n11)-oriented and patterned substrates-Reference-Cited by-同舟云学术

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MBE growth and device applications of lattice-matched and strained heterostructures on (n11)-oriented and patterned substrates

Published:1995-12 Issue:8 Volume:26 Page:887-896
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Bhattacharya Pallab

Publisher

Elsevier BV

Subject

General Engineering

Reference33 articles.

1. A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffraction

2. Cation incorporation rate limitations in molecular-beam epitaxy: Effects of strain and surface composition

3. Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin films

4. Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Piezoelectric field effects on electron density in a δ-doped AlGaAs/InyGa1-yAs/GaAs pseudomorphic HEMT;Applied Physics A;2005-02

2. Si doping forn- andp-type conduction in AlxGa1−x As grown on GaAs(311)Aby molecular-beam epitaxy;Journal of Applied Physics;2003-03

3. Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy;Applied Physics Letters;1996-12-30

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