Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure-Reference-Cited by-同舟云学术

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Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

Published:2001-10 Issue:1-2 Volume:328 Page:181-186
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Bak-Misiuk J.,Antonova I.V.,Misiuk A.,Domagala J.,Popov V.P.,Obodnikov V.I.,Härtwig J.,Romano-Rodriguez A.,Bachrouri A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference7 articles.

1. Hydrogen induced silicon surface layer cleavage

2. Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon

3. Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

4. Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

5. Perspectives, Science and Technologies for Novel SOI Devices;Popov,2000

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect structure of silicon crystals implanted with H2+ions;physica status solidi (a);2007-08

2. Structural and optical properties of high temperature–high pressure treated Si:H;Journal of Alloys and Compounds;2004-11

3. Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy;The European Physical Journal Applied Physics;2004-07

4. Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium;Solid State Phenomena;2003-09

5. Effect of High Temperature—Pressure on Buried Silicon Dioxide in Simox and Soi Structures;Radiation Effects and Defects in Solids;2003-01

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