Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy-Reference-Cited by-同舟云学术

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Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy

Published:2004-07 Issue:1-3 Volume:27 Page:415-418
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Bak-Misiuk J.,Misiuk A.,Ratajczak J.,Shalimov A.,Antonova I.,Trela J.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap:2004119-10/pdf

Reference11 articles.

1. J. Bak-Misiuk, I. V. Antonova, A. Misiuk, J. Domagala, V. P. Popov, V. I. Obodnikov, J. Härtwig, A. Romano-Rodriguez, A. Bachouri, J. Alloys Comp.328,1881 (2001)

2. I. E. Tyschenko, A. B. Talochkin, K. S. Zhuravlev, V. I. Obodnikov, V. P. Popov, Solid State Phenom.82-84, 509 ( 2002)

3. Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

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