Author:
Li K.H.,Fu W.Y.,Choi H.W.
Funder
NFSC/RGC Joint Research Scheme sponsored by the Research Grants Council of Hong Kong
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics
Reference242 articles.
1. J. Penning, K. Stober, V. Taylor, M. Yamada, (U.S. Department of Energy, Washington, DC, 2016).
2. Novel metalorganic chemical vapor deposition system for GaN growth;Nakamura;Appl. Phys. Lett.,1991
3. High-power InGaN/GaN double-heterostructure violet light-emitting-diodes;Nakamura;Appl. Phys. Lett.,1993
4. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED;Akasaki;J. Lumin.,1991
5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer;Amano;Appl. Phys. Lett.,1986
Cited by
52 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献