Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness-Reference-Cited by-同舟云学术

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Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness

Published:2022-10 Issue: Volume:170 Page:207367
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Bai Yu^ORCID,Xu Weizong,Zhou Feng,Wang Yiwang,Guo Lijian,Ren Fangfang,Zhou Dong,Chen Dunjun,Zhang Rong,Zheng Youdou,Lu Hai

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference32 articles.

1. The 2018 GaN power electronics roadmap;Amano;J. Phys. Appl. Phys.,2018

2. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron. Dev.,2017

3. 1.2 kV vertical GaN fin JFETs with robust avalanche and fast switching capabilities, 2020;Liu;IEEE International Electron Devices Meeting (IEDM),2020

4. Development of High-Voltage Vertical GaN PN Diodes;Kaplar,2020

5. Recent development of vertical GaN power devices;Oka;Jpn. J. Appl. Phys.,2019

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks;Electronics;2024-07-25

2. Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination;IEEE Electron Device Letters;2023-10

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