FeAl/MgO/FeAl MTJ with enhanced TMR and low resistance area product for MRAM: A first principle study
Author:
Funder
Ministry of Electronics and Information technology
Council of Scientific and Industrial Research, India
Publisher
Elsevier BV
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3. Calculated tunneling magnetoresistance ratio of FeRh/MgO/FeRh (001) magnetic tunnel junction;Sakhraoui;Superlattice. Microst.,2018
4. Ab-initio study of LD-HfO2, Al2O3, La2O3 and h-BN for application as dielectrics in MTJ memory device;Sharma;Superlattice. Microst.,2021
5. Sensing Schemes for STT-MRAMs structured with high TMR in low RA MTJs;Atasoyu;Microelectron. J.,2019
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