Reduction of efficiency droop in GaN/InGaN based multiple quantum well light emitting diode by varying Si-doping and thickness in barrier layers
Author:
Funder
SERB-National Postdoctoral Fellowship
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes;Hader;Appl. Phys. Lett.,2010
2. Defect related issues in the ‘current roll-off’ in InGaN based light emitting diodes;Monemar;Appl. Phys. Lett.,2007
3. Origin of efficiency droop in GaN-based light-emitting diodes;Kim;Appl. Phys. Lett.,2007
4. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes;Dai;Appl. Phys. Lett.,2010
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1. Improving performance of light-emitting diodes using InGaN/GaN MQWs with varying trapezoidal bottom well width;Optik;2021-12
2. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes;Materials;2021-04-25
3. Coaxial semipolar InGaN/GaN microwire array LED with substantially suppressed efficiency droop;Journal of Luminescence;2020-05
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