Defect-free metallization of through-glass vias with engineered geometry in additive-free electrolyte

Author:

Jayaraman ShrisudersanORCID,Sevem Matthew,Vaddi Rajesh,Kanungo Mandakini,Mazumder Prantik

Publisher

Elsevier BV

Subject

Electrochemistry

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. All-Solution-Processed Metallization of High Aspect Ratio Through Glass Vias (HAR-TGVs) with a High Adhesion Promoting Layer (APL);2023 18th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT);2023-10-25

2. TGV through-hole double-sided electroplated copper filling mode regulation and process reliability test study;SCIENTIA SINICA Chimica;2023-09-01

3. 20‐2: Integration of Through Glass Via Interconnects within Thin Film Transistor Active Matrix Backplanes;SID Symposium Digest of Technical Papers;2022-06

4. Approaches for a Solely Electroless Metallization of Through-Glass Vias;2022 IEEE 72nd Electronic Components and Technology Conference (ECTC);2022-05

5. High-speed, High-density, and Highly-manufacturable Cu-filled Through-Glass-Via Channel (Cu bridge) for Multi-chiplet Systems;2021 IEEE 71st Electronic Components and Technology Conference (ECTC);2021-06

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