Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM-Reference-Cited by-同舟云学术

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Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

Published:2013-01 Issue: Volume:44 Page:254-260
ISSN:0968-4328
Container-title:Micron
language:en
Short-container-title:Micron

Author:

Kauko H.,Grieb T.,Bjørge R.,Schowalter M.,Munshi A.M.,Weman H.,Rosenauer A.,van Helvoort A.T.J.

Publisher

Elsevier BV

Subject

Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science

Reference23 articles.

1. Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts;Dheeraj;Nano Letters,2008

2. Correlated static atomic displacements and transmission-electron-microscopy contrast in compositionally homogeneous disordered alloys;Glas;Physical Review B,1995

3. Why does wurtzite form in nanowires of III–V zinc blende semiconductors?;Glas;Physical Review Letters,2007

4. Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis;Grieb;Ultramicroscopy,2012

5. The effect of surface strain relaxation on HAADF imaging;Grillo;Ultramicroscopy,2009

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1. Element specific atom counting for heterogeneous nanostructures: Combining multiple ADF STEM images for simultaneous thickness and composition determination;Ultramicroscopy;2024-05

2. GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range;Applied Physics Letters;2023-08-21

3. Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN;Ultramicroscopy;2022-08

4. Compositional analysis of oxide-embedded III–V nanostructures;Nanotechnology;2022-06-24

5. Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications;Materials Today Communications;2021-09

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