Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis-Reference-Cited by-同舟云学术

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Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis

Published:2012-06 Issue: Volume:117 Page:15-23
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Grieb Tim,Müller Knut,Fritz Rafael,Schowalter Marco,Neugebohrn Nils,Knaub Nikolai,Volz Kerstin,Rosenauer Andreas

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Effect of nitrogen on the band structure of GaInNAs alloys;Shan;Journal of Applied Physics,1999

2. Doping, electrical properties and solar cell application of GaInNAs;Volz,2008

3. Composition mapping in InGaN by scanning transmission electron microscopy;Rosenauer;Ultramicroscopy,2011

4. Measurement of specimen thickness and composition in AlxGa1−xN/GaN using high-angle annular dark field images;Rosenauer;Ultramicroscopy,2009

5. Column-by-column compositional mapping by Z-contrast imaging;Molina;Ultramicroscopy,2009

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