Effect of junction curvature on breakdown voltage in semiconductors-Reference-Cited by-同舟云学术

Effect of junction curvature on breakdown voltage in semiconductors

Published:1966-09 Issue:9 Volume:9 Page:831-845
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sze S.M.,Gibbons G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Breakdown voltages of germanium plane-cylindrical junctions

2. Avalanche Breakdown in Germanium

3. Ionization Rates of Holes and Electrons in Silicon

4. R.A. Logan and S.M. Sze, “Avalanche Multiplication in Ge and GaAs pn Junctions,” Proceedings of 1966 International Conference on Semiconductor Physics (to be published).

5. Charge Multiplication in GaP p‐n Junctions

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