Optoelectronic Characteristics of Perimeter-Gated Single-Photon Avalanche Diodes
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-64334-7_3
Reference34 articles.
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2. M. Dandin, P. Abshire, Near Breakdown Spectral Responsivity of Perimeter-Gated Single-Photon Avalanche Diodes, in Midwest Symposium on Circuits and Systems, vol. 2017, pp. 867–870 (August 2017). https://doi.org/10.1109/MWSCAS.2017.8053061. ISBN:9781509063895. ISSN:15483746
3. F. Dehghandehnavi, M.S. Sajal, K.C. Lin, M. Dandin, Spectral Responsivity and Photoresponse Non-uniformity of a Perimeter-Gated Single-Photon Avalanche Diode Imager, in Midwest Symposium on Circuits and Systems (Institute of Electrical and Electronics Engineers Inc., 2023), pp. 317–321. https://doi.org/10.1109/MWSCAS57524.2023.10405979. ISBN:9798350302103. ISSN:15483746
4. S. Sze, G. Gibbons, Effect of junction curvature on breakdown voltage in semiconductors. Solid State Electron. 9(9), 831–845 (1966). https://doi.org/10.1016/0038-1101(66)90033-5
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