High frequency noise properties of a double avalanche region (DAR) IMPATT diode
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. A small signal analysis of an impatt device having two avalanche layers interspaced by a drift layer
2. Multiplication noise in uniform avalanche diodes
3. Noise theory for the read type avalanche diode
4. A small-signal theory of avalanche noise in IMPATT diodes
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation studies on the noise behaviour of double avalanche region diodes;Semiconductor Science and Technology;2001-09-27
2. High frequency numerical analysis of double avalanche region IMPATT diode;Semiconductor Science and Technology;1991-08-01
3. Large-signal behaviour of double-avalanche-region IMPATT diodes;Solid-State Electronics;1987-02
4. Computer Simulation of Ion-Implanted DAR Impatt around 94 GHz under Steady State Condition;physica status solidi (a);1986-03-16
5. Computer analysis of DC field and current-density profiles of DAR impatt diode;IEEE Transactions on Electron Devices;1982-11
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