A small signal analysis of an impatt device having two avalanche layers interspaced by a drift layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. A Proposed High-Frequency, Negative-Resistance Diode
2. Negative resistance in p-n junctions under avalanche breakdown conditions, part I
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5. Double-drift-region (p+pnn+) avalanche diode oscillators
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4. Internal structure optimization of a DAR IMPATT diode for high frequency band;2008 26th International Conference on Microelectronics;2008-05
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