Author:
Bandyopadhyay Atindra Mohan,Acharyya Aritra,Banerjee J. P.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Som, B., Pal, B.B., Roy, S.K.: A small-signal analysis of an IMPATT device having two avalanche layers interspaced by a drift layer. Solid State Electron 17, 1029–1038 (1974)
2. Dutta, D.N., Pati, S.P., Banerjee, J.P., Pal, B.B., Roy, S.P.: Computer analysis of DC field and current density profiles of DAR Impatt diodes. IEEE Trans. Electron Devices 29, 632–677 (1982)
3. Pati, S.P., Banerjee, J.P., Roy, S.P.: High frequency numerical analysis of DAR impatt diode. Semicond. Sci. Technol. 6, 777–783 (1991)
4. Banerjee, J.P., Roy, S.K.: Computer simulation of the small-signal admittance and negative resistance of double Avalanche region IMPATT diodes. Appl. Phys. A 56, 575–580 (1993)
5. Grant, W.N.: Electron and hole ionization rates in epitaxial Silicon. Solid State Electron. 16, 1189–1203 (1973)
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献