Effect of Self-Heating on Terahertz Double Avalanche Region Transit Time Source-Reference-Cited by-同舟云学术

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Effect of Self-Heating on Terahertz Double Avalanche Region Transit Time Source

Published:2020-01-02 Issue:1 Volume:61 Page:16-24
ISSN:0974-7338
Container-title:IETE Journal of Education
language:en
Short-container-title:IETE Journal of Education

Author:

Mukhopadhyay S. J.¹,Acharyya Aritra²^ORCID,Mitra M.¹

Affiliation:

1. Department of Electronics and Telecommunication Engineering, Indian Institute of Engineering Science and Technology, Shibpur, India

2. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, India

Publisher

Informa UK Limited

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/09747338.2020.1760739

Reference30 articles.

1. A small signal analysis of an impatt device having two avalanche layers interspaced by a drift layer

2. Computer analysis of DC field and current-density profiles of DAR impatt diode

3. High frequency numerical analysis of double avalanche region IMPATT diode

4. Computer simulation of the small-signal admittance and negative resistance of double avalanche region IMPATT diodes

5. Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

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