Computer analysis of DC field and current-density profiles of DAR impatt diode-Reference-Cited by-同舟云学术

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Computer analysis of DC field and current-density profiles of DAR impatt diode

Published:1982-11 Issue:11 Volume:29 Page:1813-1816
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Datta D.N.,Pati S.P.,Banerjee J.P.,Pal B.B.,Roy S.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31858/01482529.pdf?arnumber=1482529

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz;IEEE Electron Device Letters;2023-08

2. Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices;Journal of Computational Electronics;2023-05-25

3. Effects of Space Charges in IMPATT Source at Terahertz Regime;Emerging Trends in Terahertz Engineering and System Technologies;2021

4. Performance of 4H-SiC IMPATT Diode at Ka- and W-Band with Temperature Variation;Lecture Notes in Electrical Engineering;2020-10-15

5. Effect of Self-Heating on Terahertz Double Avalanche Region Transit Time Source;IETE Journal of Education;2020-01-02

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