High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
2. Novel high mobility Ga0.51In0.49P/GaAs modulation‐doped field‐effect transistor structures grown using a gas source molecular beam epitaxy
3. 4th Int. Conf. on Indium Phosphide and Related Materials;Ginoudi,1992
4. Charge control model of inverted GaAs–AlGaAs modulation doped FET’s (IMODFET’s)
5. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
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1. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density;Semiconductors;2011-10
2. Improved InAlGaP-based heterostructure field-effect transistors;Semiconductor Science and Technology;2006-03-07
3. Temperature-Dependent Characteristics of InGaP∕InGaAs∕GaAs High-Electron Mobility Transistor Measured between 77 and 470 K;Journal of The Electrochemical Society;2005
4. Ga0.51In0.49P/InxGa1?xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs);Microwave and Optical Technology Letters;2003-08-05
5. Depletion- and enhancement-mode In[sub 0.49]Ga[sub 0.51]P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
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