D.C. and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer using a modified pisces program-Reference-Cited by-同舟云学术

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D.C. and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer using a modified pisces program

Published:1993-09 Issue:9 Volume:36 Page:1273-1276
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kuo J.B.,Chen H.P.,Chen B.Y.,Lu T.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

2. SiGe drift base bipolar technology using Si-GeH/sub 4/ MBE for sub-40 GHz f/sub MAX/ operation

3. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region

4. A numerical study of performance potential of Si/sub 1-x/Ge/sub x/ pseudomorphic heterojunction bipolar transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 2D simulation study on the d.c. and transient behaviour of a SiGe-base heterojunction bipolar device with an extended germanium profile into the n-epi region with application to an ECL buffer;Solid-State Electronics;1996-06

2. Improved switch time of I2L at low power consumption by using a SiGe heterojunction bipolar transistor;Solid-State Electronics;1995-07

3. A fully analytical partitioned-charge-based model for linearly-graded SiGe-base heterojunction bipolar transistors;Solid-State Electronics;1994-08

4. A Model-Based Comparison of the Performance of AlGaAs/GaAs and Si/SiGe Heterojunction Bipolar Transistors (HBTs) Including Thermal Effects;Japanese Journal of Applied Physics;1994-07-15

5. An analytical SiGe-base HBT model and its effects on a BICMOS inverter circuit;IEEE Transactions on Electron Devices;1994

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