Improved switch time of I2L at low power consumption by using a SiGe heterojunction bipolar transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Low-power CMOS digital design
2. Some considerations on high-speed injection logic
3. Intrinsic gate delay of GaAs/AlGaAs single and double heterostructure I2L circuits
4. Switch-off transient analysis for heterojunction bipolar transistors in saturation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Integrated Injection Logic;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
2. Analysis of Si:Ge heterojunction integrated injection logic (I/sup 2/L) structures using a stored charge model;IEEE Transactions on Electron Devices;1998
3. Composition grading for base transit time minimization in HBTs: An analytical approach;Solid-State Electronics;1997-01
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